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TCDT1110/TCDT1110G
Vishay Semiconductors
Optocoupler, Phototransistor Output
FEATURES
* Extra low coupling capacity - typical 0.2 pF * High Common Mode Rejection * Low temperature coefficient of CTR
17201_1
NC 6
C 5
E 4
* Base not connected * Lead (Pb)-free component
e3
V DE
1 A (+) 2 C (-) 3 NC
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
* Switch-mode power supplies * Line receiver * Computer peripheral interface * Microprocessor system interface * Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - For appl. class I - IV at mains voltage 300 V - For appl. class I - III at mains voltage 600 V according DIN EN 60747-5-5.
DESCRIPTION
The TCDT1110/TCDT1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements provide a fixed distance between input and output for highest safety requirements.
VDE STANDARDS
These couplers perform safety functions according to the following equipment standards: * DIN EN 60747-5-5 Optocoupler for electrical safety requirements * IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) * VDE 0804 Telecommunication apparatus and data processing * IEC 60065 Safety for mains-operated household apparatus electronic and related
AGENCY APPROVALS
* UL1577, File No. E76222 System Code A, Double Protection * BSI IEC 60950; IEC 60065 * DIN EN 60747-5-5 pending * FIMKO
ORDER INFORMATION
PART TCDT1110 TCDT1110G Note G = Leadform 10.16 mm; G is not marked on the body.
(1)
REMARKS CTR > 100 %, DIP-6 CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature
TEST CONDITION
SYMBOL VR IF
VALUE 6 60 3 100 125
UNIT V mA A mW C
tp/T 10 s
IFSM Pdiss Tj
Document Number: 83531 Rev. 1.8, 16-May-08
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com 783
TCDT1110/TCDT1110G
Vishay Semiconductors
Optocoupler, Phototransistor Output
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature (2)
TEST CONDITION
SYMBOL VCEO VECO IC
VALUE 70 7 50 100 150 125 5300 250 - 55 to + 100 - 55 to + 125 260
UNIT V V mA mA mW C VRMS mw C C C
tp/T = 0.5, tp 10 ms
ICM Pdiss Tj
t = 1 min
VISO Ptot Tamb Tstg
2 mm from case t 10 s
Tsld
Notes (1) T amb = 25 C unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS
PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector-emitter cut-off current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 0.5 mA VCE = 5 V, IF = 10 mA, RL = 1 f = 1 MHz VCEsat fc Ck 110 0.3 0.3 V kHz pF IC = 1 mA IE = 100 A VCE = 30 V, IF = 0 VCEO VECO ICEO 70 7 150 V V nA IF = 50 mA VR = 0, f = 1 MHz VF Cj 1.2 50 1.5 V pF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER IC/IF TEST CONDITION VCE = 20 V, IF = 10 mA SYMBOL CTR MIN. 100 TYP. MAX. UNIT %
MAXIMUM SAFETY RATINGS
PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature IF Pdiss VIOTM Tsi 130 265 6 150 mA mW kV C TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note According to DIN EN 60747-5-5 see figure 1. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. www.vishay.com 784 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83531 Rev. 1.8, 16-May-08
TCDT1110/TCDT1110G
Optocoupler, Phototransistor Output
INSULATION RATED PARAMETERS
PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V Insulation resistance VIO = 500 V, Tamb = 100 C VIO = 500 V, Tamb = 200 C
(construction test only)
Vishay Semiconductors
SYMBOL Vpd VIOTM Vpd RIO RIO RIO
MIN. 1.6 6 1.3 1012 1011 109
TYP.
MAX.
UNIT kV kV kV
300 250 200 150 100 I si (mA) 50 0 0
95 10934
VIOTM
Psi (mW)
t1, t2 t3 , t4 ttest tstres VPd VIOWM VIORM
= 1 to 10 s =1s = 10 s = 12 s
0
25
50
75
100 125 150 175 200
13930
t3 ttest t4 t1 tTr = 60 s t2 t stres t
Tamb - Ambeint Temperature(C)
Fig. 3 - Derating diagram
Fig. 4 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER Turn-off time Turn-on time Turn-off time Turn-on time TEST CONDITION VS = 10 V, IC = 2 mA, RL = 100 (see figure 3) VS = 10 V, IC = 2 mA, RL = 100 (see figure 3) VS = 10 V, IF = 10 mA, RL = 1 k (see figure 4) VS = 10 V, IF = 10 mA, RL = 1 k (see figure 4) SYMBOL toff ton toff ton MIN. TYP. 15.0 15.0 18.0 9.0 MAX. UNIT s s s s
0
IF
IF
+ 10 V IC = 2 mA; adjusted through input amplitude
0
IF
IF = 10 mA
+ 10 V IC
RG = 50 tp = 0.01 T tp = 50 s
Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF
RG = 50 tp = 0.01 T tp = 50 s
Channel I Channel II
50 1k Oscilloscope RL 1 M CL 20 pF
95 10889
95 10898
Fig. 5 - Test Circuit, Non-Saturated Operation
Fig. 6 - Test Circuit, Saturated Operation
Document Number: 83531 Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com 785
TCDT1110/TCDT1110G
Vishay Semiconductors
Optocoupler, Phototransistor Output
IF 0 IC 100 % 90 % tp t
10 % 0 tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off t
ts tf t off (= ts + tf)
Storage time Fall time Turn-off time
96 11698
Fig. 7 - Switching Times
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
CTRrel - Relative Current Transfer Ratio
Ptot - Total Power Dissipation (mW)
300 Coupled device 250 200 Phototransistor 150 100 50 0 0 40 80 120 IR-diode
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 VCE = 10 V IF = 10 mA
96 11700
Tamb - Ambient Temperature (C)
96 11874
Tamb - Ambient Temperature (C)
Fig. 8 - Total Power Dissipation vs. Ambient Temperature
Fig. 10 - Relative Current Transfer Ratio vs. Ambient Temperature
1000
10 000 ICEO - Collector Dark Current with Open Base (nA) VCE = 30 V IF = 0 A
IF - Forward Current (mA)
100
1000
10
100
1
10
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
1 0 25 50 75 100
VF - Forward Voltage (V)
Tamb - Ambient Temperature (C)
Fig. 9 - Forward Current vs. Forward Voltage
Fig. 11 - Collector Dark Current vs. Ambient Temperature
www.vishay.com 786
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83531 Rev. 1.8, 16-May-08
TCDT1110/TCDT1110G
Optocoupler, Phototransistor Output
Vishay Semiconductors
CTR - Current Transfer Ratio (%)
100
1000 VCE = 20 V
IC - Collector Current (mA)
VCE = 10 V 10
100
1
10
0.1
0.01 0.1
96 11904
1
10
100
1 0.1
1
10
100
IF - Forward Current (mA)
95 10976
IF - Forward Current (mA)
Fig. 12 - Collector Current vs. Forward Current
Fig. 15 - Current Transfer Ratio vs. Forward Current
IC - Collector Current (mA)
20 mA IF = 50 mA 10 10 mA 5 mA 2 mA 1 mA 0.1 0.1 1 10 100
ton/toff - Turn-on/Turn-off Time (s)
100
50 Saturated operation VS = 5 V RL = 1 k
40
30 toff 20 10 0 0 5 10 15 ton 20
1
95 10985
VCE - Collector Emitter Voltage (V)
95 10974
IF - Forward Current (mA)
Fig. 13 - Collector Current vs. Collector Emitter Voltage
Fig. 16 - Turn-on/Turn-off Time vs. Forward Current
ton/toff - Turn-on/Turn-off Time (s)
1.0
20 Non-saturated operation VS = 10 V RL = 100 toff 10 ton 5
VCEsat - Collector Emitter Saturation Voltage (V)
0.8 20 % used 0.6 CTR = 50 % used 0.4 0.2 10 % used 0 1 10 100
15
0 0 2 4 6 8 10
95 10972
IC - Collector Current (mA)
95 10975
IC - Collector (mA)
Fig. 14 - Collector Emitter Saturation Voltage vs. Collector Current
Fig. 17 - Turn-on/Turn-off Time vs. Collector Current
Document Number: 83531 Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com 787
TCDT1110/TCDT1110G
Vishay Semiconductors
Optocoupler, Phototransistor Output
Customer code/ identification/ option
XXXXX XXXXX
Product code
V DE
VDE logo
UL logo
V XXXY 63
Plant code Package code Date code (year, week)
Vishay logo
17936
Fig. 18 - Marking example
PACKAGE DIMENSIONS in millimeters
8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min. 3.3 0.58 max. 1.54 2.54 nom. A 654 5.08 nom. Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board
0.3 max.
9 0.6 0.4 B
technical drawings according to DIN specifications
14770
123 8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min.
0.58 max. 1.54 2.54 nom. A 6 5 4 5.08 nom.
0.3 max. 10.16 0.2 0.4 B
Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board
technical drawings according to DIN specifications
123
14771
5.08 max.
3.3
www.vishay.com 788
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83531 Rev. 1.8, 16-May-08
TCDT1110/TCDT1110G
Optocoupler, Phototransistor Output
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
Vishay Semiconductors
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number: 83531 Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com 789
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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